Apparatuses and method for maskless mesoscale material deposition
US7045015B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 17, 2003 |
| Grant date | May 16, 2006 |
| Priority date | — |
| Expiry date | Jun 9, 2024 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB05D5/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Apparatuses and processes for maskless deposition of electronic and biological materials. The process is capable of direct deposition of features with linewidths varying from the micron range up to a fraction of a millimeter, and may be used to deposit features on substrates with damage thresholds near 100° C. Deposition and subsequent processing may be carried out under ambient conditions, eliminating the need for a vacuum atmosphere. The process may also be performed in an inert gas environment. Deposition of and subsequent laser post processing produces linewidths as low as 1 micron, with sub-micron edge definition. The apparatus nozzle has a large working distance—the orifice to substrate distance may be several millimeters—and direct write onto non-planar surfaces is possible.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.