Forming a photodiode to include a superlattice exclusion layer
US7045378B2 · kind B2 · utility
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16Claims
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Key dates
| Filing date | Sep 24, 2004 |
| Grant date | May 16, 2006 |
| Priority date | — |
| Expiry date | Sep 24, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/146
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A photosensitive diode has superlattice exclusion region formed from a stack of first and second layers. The first layers are penetrated by minority carriers using quantum mechanical tunneling and reduce minority carrier mobility. The second layers have a sufficiently low bandgap that the tunneling minority carriers can reach an active region of the diode. The process of successively forming first and second layers is repeated until the exclusion region is at least three times the minority carrier diffusion length.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.