Method of manufacturing surface shape recognition sensor
US7045379B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 11, 2003 |
| Grant date | May 16, 2006 |
| Priority date | — |
| Expiry date | Mar 15, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06V40/1329
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a method of manufacturing a surface shape recognition sensor, first and second interconnections are formed on a semiconductor substrate. An interlayer dielectric film on the semiconductor substrate covers the interconnections. A first metal film is electrically connected to the interconnections through first and second through holes in the interlayer dielectric film. A first mask pattern on the first metal film covers predetermined first and second regions corresponding to the through holes, respectively. The exposed first metal film is selectively removed to form a sensor electrode and connection electrode film, formed of the first metal film, in the first and second regions, respectively. An insulating passivation film on the interlayer dielectric film covers the sensor electrode and connection electrode film. A third through hole in the passivation film reaches the connection electrode film. A second metal film on the passivation film is in contact with the exposed connection electrode film. A second mask pattern on the second metal film has a pattern portion on a predetermined region. The second metal film is selectively removed using the second mask pattern as a mask to for…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.