Conductive etch stop for etching a sacrificial layer
US7045381B1 · kind B1 · utility
10Cited by
9References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2004 |
| Grant date | May 16, 2006 |
| Priority date | — |
| Expiry date | Apr 3, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32135
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a method of forming a metallic electrode comprises depositing a metal layer over a surface (e.g., substrate) and thermally processing the metal layer to form a conductive metallized ceramic. The metal layer may be deposited by sputtering and thermally processed by rapid thermal processing, for example. Among other advantages, embodiments of the present invention allow for the formation of conductive metallized ceramics, such as titanium-nitride, without the use of relatively expensive deposition tools.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.