Light emitting device, semiconductor device, and method of fabricating the devices
US7045438B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 22, 2002 |
| Grant date | May 16, 2006 |
| Priority date | — |
| Expiry date | Sep 5, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K71/13
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device in which degradation due to permeation of water and oxygen can be limited, e.g., a light emitting device having an organic light emitting device (OLED) formed on a plastic substrate, and a liquid crystal display using a plastic substrate. A layer to be debonded, containing elements, is formed on a substrate, bonded to a supporting member, and debonded from the substrate. A thin film is thereafter formed on the debonded layer. The debonded layer with the thin film is adhered to a transfer member. Cracks caused in the debonded layer at the time of debonding are thereby repaired. As the thin film in contact with the debonded layer, a film having thermal conductivity, e.g., film of aluminum nitride or aluminum nitroxide is used. This film dissipates heat from the elements and has the effect of preventing deformation and change in quality of the transfer member, e.g., a plastic substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.