Semiconductor device and method of manufacturing the same comprising thin film containing low concentration of hydrogen
US7045818B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 5, 2004 |
| Grant date | May 16, 2006 |
| Priority date | — |
| Expiry date | Sep 16, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
In a fabrication process of a semiconductor device for use in a TFT liquid crystal display system, before the start of crystallizing amorphous silicon (a-Si), dehydrogenation annealing is carried out to not only decrease the density of hydrogen in the p-Si film (13) to 5×1020 atoms/cm3 at most but also to prevent crystallization of the a-Si film (13) being obstructed due to possible excessive hydrogen remaining in the film. With the p-Si film (13) covered with an interlayer insulation film (15) in the form of a plasma nitride film, annealing is then carried out in nitrogen atmosphere at a temperature of 350° C. to 400° C. for one to three hours, more preferably 400° C. for two hours. The result is that hydrogen atoms in the p-Si film (13) efficiently terminate dangling bonds of the film and hence do not become excessive, thus improving the electrical characteristics of the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.