Nonvolatile semiconductor memory device comprising a variable resistive element containing a perovskite-type crystal structure
US7045840B2 · kind B2 · utility
49Cited by
3References
8Claims
0Family size
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Key dates
| Filing date | Dec 1, 2004 |
| Grant date | May 16, 2006 |
| Priority date | — |
| Expiry date | Dec 1, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/30
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a nonvolatile semiconductor memory device including a variable resistive element formed by sequentially stacking a lower electrode, a variable resistor with a perovskite-type crystal structure, and an upper electrode, at least one of the lower electrode and the upper electrode is a particulate electrode configured to include a particulate conductor aggregate so that the contact area with the variable resistor at an interface is effectively reduced to realize high initial resistance of the variable resistive element. Further, a film of the variable resistor is preferably formed so as to be in a highly crystalline state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.