Spin valve magnetoresistance sensor and thin film magnetic head
US7046490B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 6, 2000 |
| Grant date | May 16, 2006 |
| Priority date | — |
| Expiry date | Jun 8, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A spin valve magnetoresistance sensor of a thin film magnetic head. In one embodiment, a spin valve magnetoresistance sensor is provided with a spin valve film, in which a base layer including a first base film of Ta or some other nonmagnetic metal and, on top of this, a second base film of an alloy represented by NiFeX (where X is at least one element selected from among Cr, Nb, Rh) is formed on a substrate, and on top of this are formed by layering a free magnetic layer and pinned magnetic layer arranged to enclose a nonmagnetic conductive layer, as well as an antiferromagnetic layer, the second base film has an fcc (face-centered cubic) structure and also has a (111) orientation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.