Method and device for plasma CVD
US7047903B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 21, 2002 |
| Grant date | May 23, 2006 |
| Priority date | — |
| Expiry date | Jun 12, 2022 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/509
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma CVD apparatus is used to form thin films of excellent uniform thickness on both surfaces of a substrate without the step of turning a substrate over, and includes two connected vacuum chambers, each of which is equipped with a plurality of electrode array layers therein, whereby at least a pair of substrate holders are transported between adjacent electrode array layers in a first vacuum chamber to form a first thin film on the one surface of substrates facing the electrode array layers, and then transported into a second vacuum chamber so that the other surface of the substrates faces to an electrode array layer to form a second thin film on the other surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.