Method of chemical mechanical polishing
US7048612B2 · kind B2 · utility
1Cited by
4References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 18, 2004 |
| Grant date | May 23, 2006 |
| Priority date | — |
| Expiry date | Nov 11, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of chemical mechanical polishing that polishes a substrate by abrading a target material formed on the substrate with a polishing pad containing a slurry includes setting a polishing end time, at which time a predetermined thickness of the target material will have been removed from the substrate by polishing, polishing the substrate to remove the predetermined thickness of the target material, and increasing a level of byproduct contamination in the polishing pad to decrease a polishing rate, while polishing the substrate, so that the polishing rate decreases to approximately zero at the polishing end time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.