Metal film vapor phase deposition method and vapor phase deposition apparatus
US7048973B2 · kind B2 · utility
58Cited by
5References
6Claims
0Family size
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Key dates
| Filing date | Jun 28, 2002 |
| Grant date | May 23, 2006 |
| Priority date | — |
| Expiry date | Oct 22, 2022 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/448
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A copper film vapor phase deposition method includes the steps of exposing high-purity copper to a plasma of a gas containing chlorine gas to etch the high-purity copper, thereby generating active CuxCly, wherein x is 1 to 3, y is 1 to 3, gas, and forming a copper film by transporting the CuxCly gas onto the surface of a substrate to be processed. By using inexpensive high-purity copper and inexpensive chlorine, hydrogen chloride, or chlorine and hydrogen as source gases, a copper film containing no residual impurity such as carbon and having high film quality can be formed with high reproducibility.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.