Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device
US7049190B2 · kind B2 · utility
3,919Cited by
2References
4Claims
0Family size
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Key dates
| Filing date | Mar 17, 2003 |
| Grant date | May 23, 2006 |
| Priority date | — |
| Expiry date | Mar 17, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A ZnO buffer layer having an electric conductivity of 1×10−9 S/cm or lower or alternatively a ZnO buffer layer having a diffraction peak of a crystal face other than (002) and (004) in X-ray diffraction is formed on a substrate by sputtering. A ZnO semiconductor layer is formed on the ZnO buffer layer. The ZnO semiconductor layer is formed under the condition that the flow rate ratio of an oxygen gas in a sputtering gas is lower than that in the formation of the ZnO buffer layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.