Opposed terminal structure having a nitride semiconductor element
US7049635B2 · kind B2 · utility
28Cited by
4References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 27, 2005 |
| Grant date | May 23, 2006 |
| Priority date | — |
| Expiry date | Apr 27, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/841
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
An opposed terminal structure including a supporting substrate, a first terminal, a nitride semiconductor with a light-emitting layer, and a second terminal. The second terminal forms an opposed terminal structure with the first terminal, which can be formed in a variety of patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.