Semiconductor device using insulating film of low dielectric constant as interlayer insulating film
US7049701B2 · kind B2 · utility
17Cited by
1References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 15, 2003 |
| Grant date | May 23, 2006 |
| Priority date | — |
| Expiry date | Dec 15, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
At least one electrode pad is formed above the surface of a semiconductor substrate. A multilevel interconnection configuration is formed between the electrode pad and the semiconductor substrate. The multiple levels of interconnections in the multilevel interconnection configuration are insulated from one another by an insulating film of low dielectric constant. A dummy interconnection configuration is formed at least within the insulating film around the periphery of the electrode pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.