Patent · US Expired

Monolithic multi-functional integrated sensor and method for fabricating the same

US7051595B2 · kind B2 · utility

1Cited by
4References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 13, 2005
Grant dateMay 30, 2006
Priority date
Expiry dateJun 13, 2025

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01L9/065
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A monolithic multi-functional integrated sensor and method for making the monolithic multi-functional integrated sensor. The monolithic multi-functional integrated sensor includes: a pressure sensor including a plurality of piezoresistors having resistance values which vary with a change in external pressure, the piezoresistors being disposed in a direction so as to be subject to a piezoresistive effect produced by the external pressure at or beyond a predetermined first level; and a temperature sensor including a resistor having a resistance value which varies with a change in temperature, the resistor being disposed in a direction so as to be subject to a piezoresistive effect produced by the external pressure below a predetermined second level.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.