Etching solution, etched article and method for etched article
US7052627B1 · kind B1 · utility
9Cited by
6References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 22, 1999 |
| Grant date | May 30, 2006 |
| Priority date | — |
| Expiry date | Nov 22, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09K13/08
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
An etching solution which exhibits etching rates for both of a thermally oxidized film (THOX) and a boron-phosphorus-glass film (BPSG) of 100 Å/min or less at 25° C., and an etching rate ratio: etching rate for BPSG/etching rate for a thermally oxidized film (THOX) of 1.5 or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.