Fabrication method of semiconductor device
US7052934B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2004 |
| Grant date | May 30, 2006 |
| Priority date | — |
| Expiry date | May 8, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A fabrication method of a semiconductor device according to the present invention includes the steps of: bonding a reinforcing plate with a front surface of a semiconductor wafer via a reinforcing plate, the reinforcing plate having holes and the semiconductor wafer bearing semiconductor devices; grinding a back surface of the semiconductor wafer; and detaching the reinforcing plate from the semiconductor wafer by injecting a solvent for dissolving an adhesive layer into the holes and by allowing the solvent to permeate through the adhesive layer. The method enables the reinforcing plate to be quickly detached from the semiconductor wafer without causing defects, such as bending and cracking, in the semiconductor wafer after the reinforcing plate is used to grind the semiconductor wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.