Thin film transistor having copper alloy wire and method of manufacturing the same
US7052993B2 · kind B2 · utility
3Cited by
5References
14Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 14, 2004 |
| Grant date | May 30, 2006 |
| Priority date | — |
| Expiry date | May 19, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/927
Abstract
A thin film transistor and a method of manufacturing the same includes forming a copper alloy line on substrate, an oxidation film formed on the upper surface of the copper alloy line. The copper alloy line includes a concentration y of magnesium, and the copper alloy line has a thickness t. the concentration y of magnesium in copper alloy line is related to the thickness is as follows:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.