GaN group semiconductor light-emitting element with concave and convex structures on the substrate and a production method thereof
US7053420B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 20, 2002 |
| Grant date | May 30, 2006 |
| Priority date | — |
| Expiry date | Mar 20, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
Concaves and convexes 1a are formed by processing the surface layer of a first layer 1, and second layer 2 having a different refractive index from the first layer is grown while burying the concaves and convexes (or first crystal 10 is grown as concaves and convexes on crystal layer S to be the base of the growth, and second crystal 20 is grown, which has a different refractive index from the first crystal). After forming these concavo-convex refractive index interfaces 1a (10a), an element structure, wherein semiconductor crystal layers containing a light-emitting layer A are laminated, is formed. As a result, the light in the lateral direction, which is generated in the light-emitting layer changes its direction by an influence of the concavo-convex refractive index interface and heads toward the outside. Particularly, when an ultraviolet light is to be emitted using InGaN as a material of a light-emitting layer, a quantum well structure is employed and all the layers between the quantum well structure and the low temperature buffer layer are formed of a GaN crystal, removing AlGaN. The quantum well structure preferably consists of a well layer made of InGaN and a barrier layer …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.