Gas sensor device
US7053425B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 12, 2003 |
| Grant date | May 30, 2006 |
| Priority date | — |
| Expiry date | Nov 12, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02A50/20
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A gas sensor device including a semiconductor substrate; one or more catalytic gate-electrodes deposited on a surface of the semiconductor substrate; one or more ohmic contacts deposited on the surface of the semiconductor substrate and a passivation layer deposited on at least a portion of the surface; wherein the semiconductor substrate includes a material selected from the group consisting of silicon carbide, diamond, Group III nitrides, alloys of Group III nitrides, zinc oxide, and any combinations thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.