Semiconductor device with heat sink
US7053426B2 · kind B2 · utility
4Cited by
3References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2004 |
| Grant date | May 30, 2006 |
| Priority date | — |
| Expiry date | Sep 30, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6704
Abstract
A semiconductor device includes a glass substrate, a heat sink formed on the glass substrate and a transistor formed on the heat sink. The transistor includes an active layer formed on the heat sink and having a source region, a channel region and a drain region. A gate electrode is placed on the channel region. In addition, the heat sink may operate as additional gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.