Opto-electronic component

US7053457B2 · kind B2 · utility

Assignee

• STMICROELECTRONICS, INC. · US

Inventors

• Peter Rieve · Windeck, DE
• Jens Prima · Gehrde, DE
• Konstantin Seibel · Siegen, DE
• Marcus Walder · Bad Mergentheim, DE

Key dates

• Filing date: Feb 26, 2002
• Grant date: May 30, 2006
• Expiry date: Mar 26, 2022

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/547

Abstract

The invention relates to an opto-electronic component for converting electromagnetic radiation into an intensity-dependent photocurrent, comprising a substrate (1) with a microelectronic circuit whose surface is provided with a first layer (7) which is electrically contacted thereto and made of amorphous silicon a-i:H or alloys thereof, and at least one other optically active layer (8) is disposed upstream from said first layer in the direction of incident light thereof (7). The invention also relates to the production thereof. The aim of the invention is to improve upon an opto-electronic component of the above-mentioned variety in order to obtain high spectral sensitivity within the visible light range and, correspondingly, significantly reduce sensitivity to radiation in the infrared range without incurring any additional construction costs. The invention is characterized in that a component is produced using a material in the intrinsic absorption layer (7) which is modified by an additional hydrocarbon content corresponding to alloy conditions, whereupon photons whose energy is less than the energy gap between two bands are absorbed only in reverse contact of the component whic…