Stacked RF power amplifier
US7053718B2 · kind B2 · utility
84Cited by
7References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 25, 2003 |
| Grant date | May 30, 2006 |
| Priority date | — |
| Expiry date | Sep 25, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F3/423
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A method and apparatus provides techniques for electrically isolating switching devices in a stacked RF power amplifier, which prevents the switching devices from being subjected to high breakdown voltages. The isolation provided allows the power amplifier to be implemented on an integrated circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.