Non-volatile SRAM cell having split-gate transistors
US7054194B2 · kind B2 · utility
29Cited by
5References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2003 |
| Grant date | May 30, 2006 |
| Priority date | — |
| Expiry date | Oct 20, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C14/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
This specification discloses a non-volatile static random access memory (SRAM) cell with the feature of keeping data even after the power is turned off. It includes a static random access unit and a non-volatile memory unit. Therefore, it has the random access property of the SRAM normally. After the power is turned off, it can store data in the non-volatile memory unit, so that the data can be automatically restored to the static random access unit from the non-volatile memory unit when the power is turned on.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.