Tantalum based crucible
US7056383B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2004 |
| Grant date | Jun 6, 2006 |
| Priority date | — |
| Expiry date | Feb 13, 2024 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B35/002
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A crucible is provided that is thermally stable at high temperatures and is suitable for use in the growth of large, bulk AlN, AlxGa1-xN or other nitride single crystals. The crucible is comprised of specially treated tantalum. During the initial treatment, the walls of the crucible are carburized, thus achieving a crucible that can be subjected to high temperatures without deformation. Once the carburization of the tantalum is complete, the crucible undergoes further treatment to protect the surfaces that are expected to come into contact with nitride vapors during crystal growth with a layer of TaN. If the crucible is to be used with a graphite furnace, only the inner surfaces of the crucible are converted to TaN, thus keeping TaC surfaces adjacent to the graphite furnace elements. If the crucible is to be used with a non-graphite furnace, both the inner and outer surfaces of the crucible are converted to TaN.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.