Method of manufacturing nano-gap electrode
US7056446B2 · kind B2 · utility
10Cited by
5References
19Claims
0Family size
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Key dates
| Filing date | Sep 16, 2003 |
| Grant date | Jun 6, 2006 |
| Priority date | — |
| Expiry date | Jan 12, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/722
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of easily manufacturing a nano-gap electrode by using a focused ion beam lithography includes a layer depositing step of depositing an electrode layer and a metal mask layer in this order on an insulating substrate, a mask pattern forming step of etching the metal mask layer by using the focused ion beam and thereby forming a mask pattern, a dry etching step of transferring a pattern to the electrode layer by dry etching, and a wet etching step of removing the metal mask layer by using a solution that selectively dissolves the metal mask layer compared to the electrode layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.