Field emission display with double gate structure and method of manufacturing therefor
US7056753B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 13, 2004 |
| Grant date | Jun 6, 2006 |
| Priority date | — |
| Expiry date | Feb 10, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2201/30469
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A field emission display with a double gate structure and a method of manufacturing therefor are provided. The field emission display includes a substrate, a cathode layer formed on the substrate, a gate insulating layer which is formed on the substrate and the cathode layer and has a cavity through which part of the cathode layer is exposed, a field emitter provided on the cathode layer exposed on the bottom of the cavity, a first gate layer which is formed in the gate insulating layer and in which a first gate hole having a diameter greater than that of the cavity is formed not to be exposed to an inner surface of the cavity, and a second gate layer which is formed on the gate insulating layer and in which a second gate hole is formed in a portion that corresponds to the cavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.