Composite structure for electronic microsystems and method for production of said composite structure
US7056763B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2002 |
| Grant date | Jun 6, 2006 |
| Priority date | — |
| Expiry date | Aug 18, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19041
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a composite structure for electronic microsystems and a method for producing this composite structure, with the composite structure being provided with a polycrystalline diamond layer (4) for heat withdrawal. The growth substrate (1) contains or forms a component layer (2) with the electronic microsystems, which are provided with binary or higher order component compound semiconductors. A protective layer (3), which encloses the component layer at least indirectly almost entirely, is placed between the component layer 2 and the diamond layer (4). A material is selected for the protective layer whose reactivity with the precursor materials present in the deposition of the diamond layer (4) by means of CVD, preferably by means of plasma CVD, is smaller than that of the component layer (2), and said protective layer. In order for the protective layer (3) to develop sufficient effectivity, it must be applied with an original thickness of at least 20 nm, preferably at least 50 nm and particularly preferred at least 100 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.