Cutting method and method of manufacturing semiconductor device
US7056768B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 16, 2004 |
| Grant date | Jun 6, 2006 |
| Priority date | — |
| Expiry date | Nov 10, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/18301
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A cutting method for separating individual semiconductor devices by cutting boundary portions in a group of semiconductor devices made up by arranging a plurality of semiconductor devices in which a ductile first layer and a second layer are stacked on a peripheral side thereof, the cutting method comprises a cutting step of cutting the first and second layers by moving a first rotary body from the boundary portions of the group of semiconductor devices in the direction in which the first and second layers are stacked; and a burr removal step of removing burrs from the first layer by moving a second rotary body, softer than the first rotary body and wider than the first rotary body in the direction of rotational axis, from the cut boundary portions of the group of semiconductor devices in the direction in which the first and second layers are stacked.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.