Direct photo-patterning of nanoporous organosilicates, and method of use
US7056840B2 · kind B2 · utility
110Cited by
5References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2003 |
| Grant date | Jun 6, 2006 |
| Priority date | — |
| Expiry date | May 25, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A low dielectric constant, patterned, nanoporous material and a method of forming the material. The material is formed by depositing a layer onto a substrate, said layer comprising a reactive organosilicate material, a porogen, an initiator, and a solvent; exposing portions of the layer to energy (e.g., thermal energy or electromagnetic radiation) to change the solubility of portions of the organosilicate material with respect to the solvent; selectively removing more soluble portions of the layer to generate a relief pattern; and decomposing the porogen to thereby generate a nanoporous organosilicate layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.