Light-activated semiconductor switches
US7057214B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 1, 2003 |
| Grant date | Jun 6, 2006 |
| Priority date | — |
| Expiry date | Jan 27, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/918
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Semiconductor switches, such as thyristors, may be light activated by introducing the light into the switch via a groove having a sloped surface to receive the triggering light. The use of a sloped surface increases the surface path length between points of different electrical potential in the groove and, therefore, reduces the likelihood of electrical breakdown on the groove wall. In one particular embodiment, a light-activated thyristor includes a semiconductor anode layer, an n-base layer, a p-base layer and a semiconductor cathode layer disposed parallel to a thyristor plane. A thyristor axis lies perpendicular to the thyristor plane. A groove having a light refracting side wall extends into the thyristor from the anode layer. A portion of the light refracting side wall is disposed non-parallel to the thyristor plane and to the thyristor axis, and extends in the n-drift layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.