Semiconductor device allowing modulation of a gain coefficient and a logic circuit provided with the same
US7057239B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 3, 2004 |
| Grant date | Jun 6, 2006 |
| Priority date | — |
| Expiry date | May 20, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
In addition to ordinary MOS gate, drain and source, a semiconductor element includes a control gate having geometry, which is defined only by a group of straight lines along a rectangular form of the MOS gate, is not defined by an oblique line and provides a nonuniform gate length at least in one of regions aligned in a direction of a gate width. A channel region formed by the control gate provides a region of strong electric fields and a region of weak electric fields. Consequently, a conductance of a whole channel region formed by the MOS gate and the control gate, i.e., a gain coefficient β of the semiconductor element can be modulated in accordance with voltages applied to the MOS gate and the control gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.