Patent · US Expired

Semiconductor component, particularly a micromechanical pressure sensor

US7057248B2 · kind B2 · utility

4Cited by

8References

32Claims

0Family size

Assignee

Robert Bosch GmbH · DE

Inventors

Helmut Sautter · Ditzingen, DE
Frank Schatz · Kornwestheim, DE
Juergen Graf · Stuttgart, DE
Hans Artmann · Magstadt, DE
Udo-Martin Gomez · Leonberg, DE
Kersten Kehr · Zwota, DE

Key dates

Filing date	Nov 8, 2002
Grant date	Jun 6, 2006
Priority date	—
Expiry date	Apr 30, 2023

Classification

Technology area (CPC G)Physics
CPC primaryG01L27/00
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A semiconductor component, in particular a micromechanical pressure sensor based on silicon, having a base layer, an at least largely self-supporting diaphragm and an overlayer situated on the diaphragm, the diaphragm and the base layer, at least from place to place, delimiting a void. Furthermore, at least from place to place, above the diaphragm a conducting region is provided in the overlayer which is electrically poorly conductive as compared to the conducting region, to which the surface of the diaphragm that faces the overlayer is able to be electrically contacted.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.