Static random access memory

US7057302B2 · kind B2 · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventors

• Kazuya Matsuzawa · Yokohama, JP
• Ken Uchida · Tokyo, JP
• Takahiro Nakauchi · Yokohama, JP

Key dates

• Filing date: Aug 3, 2004
• Grant date: Jun 6, 2006
• Expiry date: Dec 28, 2024

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S257/903

Abstract

A static random access memory has first and second complementary field-effect transistors. The first complementary field-effect transistor includes a semiconductor substrate, a first field-effect transistor of electron conduction type which has a first drain region constituting a Schottky junction and a gate electrode, and a first field-effect transistor of positive hole conduction type which shares the first drain region and has a shared gate electrode. The second complementary field-effect transistor includes a second field-effect transistor of electron conduction type which has a second drain region and a gate electrode, a second field-effect transistor of positive hole conduction type which shares the second drain region and has a shared gate electrode. The gate electrode shared by the first and second complementary field-effect transistors is connected to the common drain region of the mutually opposing complementary field-effect transistors, and the static random access memory has superior resistance to software errors.