Heterostructure bipolar transistor power amplifier module with dynamic voltage supply for improved efficiency
US7057461B1 · kind B1 · utility
71Cited by
10References
8Claims
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Key dates
| Filing date | Mar 18, 2004 |
| Grant date | Jun 6, 2006 |
| Priority date | — |
| Expiry date | Mar 18, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F1/0211
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A power amplifier comprises first and second power transistor stages that receive first and second supply voltages, respectively. First and second bias circuits provide the biasing for the first and second power transistor stages, respectively, in response to a reference voltage and a bias voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.