High sensitivity tunneling GMR sensors with synthetic antiferromagnet free layer
US7057865B1 · kind B1 · utility
9Cited by
15References
20Claims
0Family size
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Key dates
| Filing date | Aug 9, 2001 |
| Grant date | Jun 6, 2006 |
| Priority date | — |
| Expiry date | Oct 23, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A magnetic sensor including a tunneling magnetoresistive stack with a synthetic antiferromagnet (SAF) free layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.