Bond coat for silicon based substrates
US7060360B2 · kind B2 · utility
18Cited by
9References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 22, 2003 |
| Grant date | Jun 13, 2006 |
| Priority date | — |
| Expiry date | May 18, 2024 |
Classification
- Technology area (CPC F)Mechanical Engineering; Lighting; Heating
- CPC primaryF01D5/288
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A bond layer for use on a silicon based substrate. The bond layer comprises an alloy comprising a refractory metal disilicide/silicon eutectic. The refractory metal disilicide is selected from the group consisting of disilicides of molybdenum, chromium, hafnium, niobium, tantalum, rhenium, titanium, tungsten, uranium, vanadium, yttrium and mixtures thereof. The refractory metal disilicide/silicon eutectic has a melting point of greater than 1300° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.