Process for fabricating a single-crystal substrate and integrated circuit comprising such a substrate
US7060596B2 · kind B2 · utility
1Cited by
10References
12Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 11, 2002 |
| Grant date | Jun 13, 2006 |
| Priority date | — |
| Expiry date | Jan 11, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02667
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An initial single-crystal substrate 1 having, locally and on the surface, at least one discontinuity in the single-crystal lattice is formed. The initial substrate is recessed at the discontinuity. The single-crystal lattice is amorphized around the periphery of the recess. A layer of amorphous material having the same chemical composition as that of the initial substrate is deposited on the structure obtained. The structure obtained is thermally annealed in order to recrystallize the amorphous material so as to be continuous with the single-crystal lattice of the initial substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.