Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
US7061014B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2002 |
| Grant date | Jun 13, 2006 |
| Priority date | — |
| Expiry date | Oct 31, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Disclosed is a natural-superlattice homologous single-crystal thin film, which includes a complex oxide which is epitaxially grown on either one of a ZnO epitaxial thin film formed on a single-crystal substrate, the single-crystal substrate after disappearance of the ZnO epitaxial thin film and a ZnO single crystal. The complex oxide is expressed by the formula: M1M2O3 (ZnO)m, wherein M1 is at least one selected from the group consisting of Ga, Fe, Sc, In, Lu, Yb, Tm, Er, Ho and Y, M2 is at least one selected from the group consisting of Mn, Fe, Ga, In and Al, and m is a natural number of 1 or more. A natural-superlattice homologous single-crystal thin film formed by depositing the complex oxide and subjecting the obtained layered film to a thermal anneal treatment can be used in optimal devices, electronic devices and X-ray optical devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.