Semiconductor circuit array substrate with a photo-electric sensor portion
US7061019B2 · kind B2 · utility
1Cited by
2References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 12, 2004 |
| Grant date | Jun 13, 2006 |
| Priority date | — |
| Expiry date | Jul 12, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/18
Abstract
A circuit array substrate is provided with thin-film transistors 4 and 5 and PIN diode 6 formed on insulation substrate 3. Active layer 11 and photo-electric sensor portion 21 are made of poly-silicon films. Impurities are doped into active layer 11 and photo-electric sensor portion 21 in the same process chamber, if necessary, to make their impurity concentrations different from each other. Thin-film transistors 4 and 5 with prescribed characteristics and PIN diode 6 with improved photosensitivity can be simultaneously, easily manufactured on insulation substrate 3 with a lesser number of processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.