High magnetic anisotropy hard magnetic bias element
US7061731B2 · kind B2 · utility
22Cited by
5References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 17, 2003 |
| Grant date | Jun 13, 2006 |
| Priority date | — |
| Expiry date | Jul 9, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/493
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive sensor having an MR stack biased by high anisotropy hard bias elements thereby reducing distortion in sensor operation and improving head to head operational values. The high anisotropy hard bias elements are formed from a hard magnetic material deposited in a thin film having a substantially axial preferred direction of magnetic anisotropy prior to application of a setting field. The magnetic anisotropy in the hard magnetic material is formed by oblique deposition in a direction approximately normal to the preferred direction of anisotropy in the resulting hard bias element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.