Wordline-based source-biasing scheme for reducing memory cell leakage
US7061794B1 · kind B1 · utility
14Cited by
4References
30Claims
0Family size
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Key dates
| Filing date | Mar 30, 2004 |
| Grant date | Jun 13, 2006 |
| Priority date | — |
| Expiry date | Sep 28, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/417
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A source-biasing mechanism for leakage reduction in SRAM. In standby mode, wordlines are deselected and a source-biasing potential is provided to SRAM cells. In read mode, a selected wordline deactivates the source-biasing potential provided to the selected row of SRAM cells, whereas the remaining SRAM cells on the selected bitline column continue to be source-biased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.