Laser thin film poly-silicon annealing system
US7061959B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 1, 2004 |
| Grant date | Jun 13, 2006 |
| Priority date | — |
| Expiry date | Jul 1, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S3/2366
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A gas discharge laser crystallization apparatus and method for performing a transformation of a crystal makeup or orientation in a film on a workpiece is disclosed, which may comprise a master oscillator power amplifier MOPA or power oscillator power amplifier configured XeF laser system producing a laser output light pulse beam at a high repetition rate and high power with a pulse to pulse dose control; an optical system producing an elongated thin pulsed working beam from the laser output light pulse beam. The apparatus may further comprise the laser system is configured as a POPA laser system and further comprising: relay optics operative to direct a first output laser light pulse beam from a first laser PO unit into a second laser PA unit; and, a timing and control module timing the creation of a gas discharge in the first and second laser units within plus or minus 3 ns, to produce the a second laser output light pulse beam as an amplification of the first laser output light pulse beam. The system may comprise divergence control in the oscillator laser unit. Divergence control may comprise an unstable resonator arrangement. The system may further comprise a beam pointing contr…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.