Semiconductor laser with a weakly coupled grating

US7061962B2 · kind B2 · utility

Assignee

• Nanoplus Ltd. · JP

Inventors

• Johann Peter Reithmaier · Kassel, DE
• Lars Bach · Ullersdorf, DE

Key dates

• Filing date: Aug 5, 2002
• Grant date: Jun 13, 2006
• Expiry date: Mar 30, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/22
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A semiconductor laser with a semiconductor substrate, a laser layer arranged on the semiconductor substrate, a waveguide arranged parallel to the laser layer and a strip shaped grating structure is disclosed. The laser layer, the waveguide and the grating are arranged a configuration which results in weak coupling between the laser light and the grating structure, so that the laser light interacts with an increased number of grating elements. A process for the production of such a semiconductor laser is also disclosed.