Semiconductor laser device
US7061963B2 · kind B2 · utility
1Cited by
3References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 24, 2003 |
| Grant date | Jun 13, 2006 |
| Priority date | — |
| Expiry date | Feb 19, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34373
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device includes an n type diffraction grating layer of n-InGaAsP on an n-InP substrate, and having through-holes periodically disposed alongside of one another in a laser optical waveguide direction, an n-InP layer containing S as a dopant impurity in a concentration of at least 1×1019 cm−3. The through holes are buried in the n-InP layer, and an active layer is disposed on both the n-InP layer and the diffraction grating layer through an n-InP cladding layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.