High pressure high temperature growth of crystalline group III metal nitrides
US7063741B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2002 |
| Grant date | Jun 20, 2006 |
| Priority date | — |
| Expiry date | Jul 3, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1096
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming at least one single crystal of a Group III metal nitride. The method includes the steps of: providing a flux material and a source material comprising at least one Group III metal selected from the group consisting of aluminum, indium, and gallium, to a reaction vessel; sealing the reaction vessel; heating the reaction vessel to a predetermined temperature and applying a predetermined pressure to the vessel. The pressure is sufficient to suppress decomposition of the Group III metal nitride at the temperature. Group III metal nitrides, as well as electronic devices having a Group III metal nitride substrate formed by the method are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.