High purity sputter targets with target end-of-life indication and method of manufacture
US7063773B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 17, 2001 |
| Grant date | Jun 20, 2006 |
| Priority date | — |
| Expiry date | May 17, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3491
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A preferred sputter target assembly (10, 10′) comprises a target (12, 12′), a backing plate (14, 14′) bonded to the target (12, 12′) along an interface (22, 22′) and dielectric particles (20, 20′) between the target (12, 12′) and the backing plate (14, 14′). A preferred method for manufacturing the sputter target assembly (10, 10′) comprises the steps of providing the target (12, 12′) and the backing plate (14, 14′); distributing the dielectric particles (20, 20′) between mating surfaces (24, 26) of the target (12, 12′) and the backing plate (14, 14′), most preferably along a sputtering track pattern on one of the mating surfaces; and bonding the target (12, 12′) to the backing plate (14, 14′) along the mating surfaces (24, 26). A preferred method for sputtering in accordance with the invention comprises the steps of applying electrical power to the sputter target (50, 160); causing the sputter target assembly (50, 160) to produce an electromagnetic signal (not shown) when a target end-of-life condition exists; and monitoring the sputter target assembly (50, 160) to detect the electromagnetic signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.