Room temperature ferromagnetic semiconductor grown by plasma enhanced molecular beam epitaxy and ferromagnetic semiconductor based device
US7063986B2 · kind B2 · utility
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Key dates
| Filing date | Aug 3, 2004 |
| Grant date | Jun 20, 2006 |
| Priority date | — |
| Expiry date | Aug 3, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/832
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A 3 group–5 group compound ferromagnetic semiconductor, comprising one material ‘A’ selected from the group of Ga, Al and In and one material ‘B’ selected from the group consisting of N and P, wherein one material ‘C’ selected from the group consisting of Mn, Mg, Co, Fe, Ni, Cr and V is doped as a material for substituting the material ‘A’, the compound semiconductor has a single phase as a whole. The ferromagnetic semiconductor can be fabricated by a plasma-enhance molecular beam epitaxy growing method and since it shows the ferromagnetic characteristics at a room temperature, it can be applied as various spin electron devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.