Plasma treatment apparatus and method for plasma treatment
US7064089B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 10, 2003 |
| Grant date | Jun 20, 2006 |
| Priority date | — |
| Expiry date | Jan 31, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6838
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A plasma treatment apparatus and a method for plasma treatment are provided that made possible to control accurately a distance between plasma and an object to be treated (hereinafter referred to as an object), and that facilitated a transportation of a substrate that a width is thin and grown in size. The plasma treatment apparatus of the present invention is provided with a gas supply means for introducing a processing gas into a place between a first electrode and a second electrode under an atmospheric pressure or around atmospheric pressure; a plasma generation means for generating plasma by applying a high frequency voltage to the first electrode or the second electrode under the condition that the processing gas is introduced; and, a transport means for transporting the object by floating the object by blowing the processing gas or a transporting gas to the object. An etching treatment; an ashing treatment; a thin film formation; or a cleaning treatment of components using the first electrode and the second electrode is carried out by moving a relative position between the first electrode and the second electrode, and the object.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.