Organic field effect transistor with off-set threshold voltage and the use thereof

US7064345B2 · kind B2 · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Walter Fix · Fürth, DE
• Andreas Ullmann · Zirndorf, DE

Key dates

• Filing date: Sep 12, 2002
• Grant date: Jun 20, 2006
• Expiry date: Dec 17, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K10/464

Abstract

The invention relates to an organic field effect transistor with off-set threshold voltage. Said OFET has an intermediate layer that defines a space charge region between the insulator and the semiconductor.